矽奈米元件物理

臺北科技大學 114-2 學期課程，課號 359238。

• 學期：114-2
• 授課教師：徐曉萱
• 學分：3
• 選修
• 上課時段：週一 5 節；週二 5、6 節

課程大綱

本課程介紹現代矽奈米之元件物理與其操作原理，課程主題涵蓋金屬/半導體接面、能帶圖、金氧半電容元件、金氧半場效電晶體、金氧半場效電晶體之微縮、先進金氧半場效電晶體與其製程技術。 This course provides an introduction to the fundamental physics and operation principles of silicon-based nano devices in modern electronics. This class will cover topics include metal/semiconductor junctions, energy band diagrams, MOS capacitors, MOS field-effect transistors (MOSFETs). MOSFET scaling, modern MOSFETs, and future transistor technologies will also be discussed.(Course taught in English)

課程進度

1. P-N junction and P-N diode 2.Metal-Semiconductor Contacts and Schottky Diodes 3. MOS Capacitors 4. Fundamentals of MOSFET 5. Nonideal MOS 6. MOSFETs in ICs--scaling, leakage, and other topics 7. Modern FET devices and Semiconductor Processing

評量方式

Midterm Exam: 40% Final Exam: 40 % Class Participation: 20% (Homework, Classwork, Attendance)

教材

【遵守智慧財產權觀念，請使用正版教科書，不得使用非法影印教科書】 使用外文原文書：是 1.Fundamentals of Modern VLSI Devices, Yuan Taur and TaK H. Ning, ISBN：9781107635715 2.Semiconductor Physics and Devices:Basic Principles, 4e, Donald A. Neamen, ISBN：9780073529585 3.Lecture notes/handouts